Infineon IPD Type N-Channel MOSFET, 180 A, 100 V N, 3-Pin TO-252 IPD50N10S3L16ATMA1

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 2 units)*

SGD7.78

(exc. GST)

SGD8.48

(inc. GST)

Add to Basket
Select or type quantity
Last RS stock
  • Final 2,500 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
2 - 8SGD3.89SGD7.78
10 - 98SGD3.70SGD7.40
100 - 248SGD3.505SGD7.01
250 - 498SGD3.335SGD6.67
500 +SGD3.175SGD6.35

*price indicative

Packaging Options:
RS Stock No.:
244-0878
Mfr. Part No.:
IPD50N10S3L16ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.7mΩ

Channel Mode

N

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET OptiMOSTM Power Transistor is a Green product RoHS compliant and is Automotive AEC Q101 qualified.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

100% Avalanche tested

Related links