Infineon C7 GOLD Type N-Channel MOSFET & Diode, 83 A, 650 V Enhancement, 10-Pin HDSOP IPDD60R080G7XTMA1

RS Stock No.:: 220-7418
Mfr. Part No.:: IPDD60R080G7XTMA1
Manufacturer:: Infineon

Infineon C7 GOLD Type N-Channel MOSFET & Diode, 83 A, 650 V Enhancement, 10-Pin HDSOP IPDD60R080G7XTMA1

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 2 units)*

SGD9.15

(exc. GST)

SGD9.974

(inc. GST)

FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28

In Stock

1,700 unit(s) ready to ship from another location

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Units	Per unit	Per Pack*
2 - 8	SGD4.575	SGD9.15
10 - 98	SGD4.475	SGD8.95
100 - 248	SGD4.335	SGD8.67
250 - 498	SGD4.215	SGD8.43
500 +	SGD4.09	SGD8.18

*price indicative

RS Stock No.:: 220-7418
Mfr. Part No.:: IPDD60R080G7XTMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET & Diode
	Channel Type	Type N
	Maximum Continuous Drain Current Id	83A
	Maximum Drain Source Voltage Vds	650V
	Series	C7 GOLD
	Package Type	HDSOP
	Mount Type	Surface
	Pin Count	10
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	174W
	Typical Gate Charge Qg @ Vgs	42nC
	Forward Voltage Vf	0.8V
	Maximum Gate Source Voltage Vgs	20 V
	Length	6.6mm
	Height	21.11mm
	Width	2.35 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET & Diode
	Channel Type Type N
	Maximum Continuous Drain Current Id 83A
	Maximum Drain Source Voltage Vds 650V
	Series C7 GOLD
	Package Type HDSOP
	Mount Type Surface
	Pin Count 10
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 174W
	Typical Gate Charge Qg @ Vgs 42nC
	Forward Voltage Vf 0.8V
	Maximum Gate Source Voltage Vgs 20 V
	Length 6.6mm
	Height 21.11mm
	Width 2.35 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPDD60R080G7XTMA1

The Infineon technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V Cool MOS G7 super junction (SJ) MOSFETis combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.

Gives best-in-class FOM RDS(on) x Eoss and RDS(on) x Qg

Innovative top-side cooling concept

Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance

TCOB capability of >> 2.000 cycles, MSL1 compliant and total Pb-free

Enabling highest energy efficiency

Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits

Reduced parasitic source inductance improves e efficiency and ease-of-use

Enables higher power density solutions

Exceeding the highest quality standards

Infineon C7 GOLD Type N-Channel MOSFET & Diode, 83 A, 650 V Enhancement, 10-Pin HDSOP IPDD60R080G7XTMA1

FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28

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