Infineon OptiMOS™ 3 N-Channel MOSFET Transistor, 100 A, 150 V, 3-Pin D2PAK IPB072N15N3GATMA1 | RS
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    Infineon OptiMOS™ 3 N-Channel MOSFET Transistor, 100 A, 150 V, 3-Pin D2PAK IPB072N15N3GATMA1

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    Subtotal (1 reel of 1000 units)**

    SGD2,323.00

    (exc. GST)

    SGD2,532.00

    (inc. GST)

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    1000 - 2000SGD2.323SGD2,323.00
    3000 - 4000SGD2.236SGD2,236.00
    5000 +SGD2.096SGD2,096.00

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    RS Stock No.:
    911-4864
    Mfr. Part No.:
    IPB072N15N3GATMA1
    Manufacturer:
    Infineon
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    Brand

    Infineon

    Channel Type

    N

    Maximum Continuous Drain Current

    100 A

    Maximum Drain Source Voltage

    150 V

    Package Type

    D2PAK (TO-263)

    Series

    OptiMOS™ 3

    Mounting Type

    Surface Mount

    Pin Count

    3

    Maximum Drain Source Resistance

    7.7 mΩ

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    4V

    Minimum Gate Threshold Voltage

    2V

    Maximum Power Dissipation

    300 W

    Maximum Gate Source Voltage

    -20 V, +20 V

    Length

    10.31mm

    Number of Elements per Chip

    1

    Typical Gate Charge @ Vgs

    70 nC @ 10 V

    Width

    9.45mm

    Maximum Operating Temperature

    +175 °C

    Minimum Operating Temperature

    -55 °C

    Height

    4.57mm

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