Infineon OptiMOS 3 N-Channel MOSFET, 50 A, 150 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

SGD2,342.00

(exc. GST)

SGD2,553.00

(inc. GST)

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Units
Per unit
Per Reel*
1000 - 2000SGD2.342SGD2,342.00
3000 - 4000SGD2.254SGD2,254.00
5000 +SGD2.113SGD2,113.00

*price indicative

RS Stock No.:
911-0834
Mfr. Part No.:
IPB200N15N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

150V

Series

OptiMOS 3

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

20mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

23nC

Maximum Gate Source Voltage Vgs

-20V, +20V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

150W

Maximum Operating Temperature

175°C

Length

10.31mm

Width

9.45mm

Standards/Approvals

No

Height

4.57mm

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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