Infineon OptiMOS 3 Type N-Channel MOSFET, 130 A, 150 V Enhancement, 7-Pin TO-263 IPB065N15N3GATMA1
- RS Stock No.:
- 906-4283
- Mfr. Part No.:
- IPB065N15N3GATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD15.43
(exc. GST)
SGD16.818
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 1,556 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD7.715 | SGD15.43 |
| 10 - 48 | SGD7.49 | SGD14.98 |
| 50 - 98 | SGD7.335 | SGD14.67 |
| 100 - 248 | SGD7.20 | SGD14.40 |
| 250 + | SGD7.02 | SGD14.04 |
*price indicative
- RS Stock No.:
- 906-4283
- Mfr. Part No.:
- IPB065N15N3GATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 130A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-263 | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 6.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 9.45mm | |
| Width | 4.57 mm | |
| Length | 10.31mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 130A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-263 | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 6.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 9.45mm | ||
Width 4.57 mm | ||
Length 10.31mm | ||
Automotive Standard No | ||
RoHS Status: Exempt
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 120 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 7-Pin TO-263 IPB017N06N3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263 IPB011N04NGATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 100 V Enhancement, 7-Pin TO-263 IPB025N10N3GATMA1