N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 Infineon IPB025N10N3GATMA1

RS Stock No.:: 911-0825
Mfr. Part No.:: IPB025N10N3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 Infineon IPB025N10N3GATMA1

This image is representative of the product range

Bulk discount available

Price Each (On a Reel of 1000)

SGD4.782

(exc. GST)

SGD5.212

(inc. GST)

Temporarily out of stock - back order for despatch 28/02/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Reel**
1000 - 2000	SGD4.782	SGD4,782.00
3000 - 4000	SGD4.603	SGD4,603.00
5000 +	SGD4.315	SGD4,315.00

**price indicative

RS Stock No.:: 911-0825
Mfr. Part No.:: IPB025N10N3GATMA1
Manufacturer:: Infineon

MOSFET N-ch OptiMOS3 100V 180A TO263-7
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	180 A
Maximum Drain Source Voltage	100 V
Package Type	D2PAK-7
Series	OptiMOS™ 3
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	4.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	155 nC @ 10 V
Length	10.31mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Width	9.45mm
Minimum Operating Temperature	-55 °C
Height	4.57mm

N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 Infineon IPB025N10N3GATMA1

Infineon OptiMOS™3 Power MOSFETs, 100V and over

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