N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 Infineon IPB025N10N3GATMA1

RS Stock No.:: 754-5421
Mfr. Part No.:: IPB025N10N3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 Infineon IPB025N10N3GATMA1

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Subtotal (1 unit)**

SGD8.73

(exc. GST)

SGD9.52

(inc. GST)

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Units	Per unit
1 - 9	SGD8.73
10 - 49	SGD8.55
50 - 99	SGD8.03
100 - 249	SGD6.78
250 +	SGD5.68

**price indicative

RS Stock No.:: 754-5421
Mfr. Part No.:: IPB025N10N3GATMA1
Manufacturer:: Infineon

MOSFET N-ch OptiMOS3 100V 180A TO263-7
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	180 A
Maximum Drain Source Voltage	100 V
Package Type	D2PAK (TO-263)
Series	OptiMOS™ 3
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	4.4 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	155 nC @ 10 V
Length	10.31mm
Width	9.45mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	4.57mm

N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 Infineon IPB025N10N3GATMA1

FREE delivery for orders over SGD250.00 (ex GST)

Infineon OptiMOS™3 Power MOSFETs, 100V and over