Infineon OptiMOS 5 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin TO-263

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Subtotal (1 reel of 1000 units)*

SGD3,009.00

(exc. GST)

SGD3,280.00

(inc. GST)

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  • Shipping from 24 August 2026
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Units
Per unit
Per Reel*
1000 - 1000SGD3.009SGD3,009.00
2000 - 2000SGD2.893SGD2,893.00
3000 +SGD2.856SGD2,856.00

*price indicative

RS Stock No.:
214-9008
Mfr. Part No.:
IPB024N10N5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS 5

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

2.4mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS 5 100V power MOSFET is especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.

100% avalanche tested

Qualified according to JEDEC for target applications

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