Infineon OptiMOS 3 Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263 IPB027N10N3GATMA1

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SGD10.55

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SGD11.50

(inc. GST)

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Per Pack*
2 - 8SGD5.275SGD10.55
10 - 38SGD5.155SGD10.31
40 - 98SGD5.005SGD10.01
100 - 198SGD4.855SGD9.71
200 +SGD4.705SGD9.41

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Packaging Options:
RS Stock No.:
825-9235
Mfr. Part No.:
IPB027N10N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

OptiMOS 3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

155nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Width

9.45 mm

Standards/Approvals

No

Length

10.31mm

Height

4.57mm

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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