Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 onsemi NTJD4152PT1G

RS Stock No.:: 780-0611
Mfr. Part No.:: NTJD4152PT1G
Manufacturer:: onsemi

Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 onsemi NTJD4152PT1G

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 25)

SGD0.535

(exc. GST)

SGD0.583

(inc. GST)

23425 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
25 - 25	SGD0.535	SGD13.375
50 - 100	SGD0.502	SGD12.55
125 - 225	SGD0.476	SGD11.90
250 - 475	SGD0.456	SGD11.40
500 +	SGD0.426	SGD10.65

**price indicative

RS Stock No.:: 780-0611
Mfr. Part No.:: NTJD4152PT1G
Manufacturer:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	880 mA
Maximum Drain Source Voltage	20 V
Package Type	SOT-363 (SC-88)
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	1 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	350 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-12 V, +12 V
Length	2.2mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	2.2 nC @ 4.5 V
Width	1.35mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1mm

Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 onsemi NTJD4152PT1G

Dual P-Channel MOSFET, ON Semiconductor

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