onsemi Isolated 2 Type P-Channel MOSFET, 880 mA, 20 V Enhancement, 6-Pin SOT-363 NTJD4152PT1G
- RS Stock No.:
- 780-0611
- Mfr. Part No.:
- NTJD4152PT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
SGD11.075
(exc. GST)
SGD12.075
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Limited stock
- Plus 23,150 left, shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD0.443 | SGD11.08 |
| 50 - 100 | SGD0.416 | SGD10.40 |
| 125 - 225 | SGD0.394 | SGD9.85 |
| 250 - 475 | SGD0.378 | SGD9.45 |
| 500 + | SGD0.352 | SGD8.80 |
*price indicative
- RS Stock No.:
- 780-0611
- Mfr. Part No.:
- NTJD4152PT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 880mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Forward Voltage Vf | -0.8V | |
| Typical Gate Charge Qg @ Vgs | 2.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 350mW | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Width | 1.35 mm | |
| Length | 2.2mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 880mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Forward Voltage Vf -0.8V | ||
Typical Gate Charge Qg @ Vgs 2.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 350mW | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Width 1.35 mm | ||
Length 2.2mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Related links
- onsemi Isolated 2 Type P-Channel MOSFET 20 V Enhancement, 6-Pin SOT-363
- onsemi Isolated 2 Type N 880 mA 6-Pin SC-88
- onsemi Isolated 2 Type N 880 mA 6-Pin SC-88 NTJD4158CT1G
- onsemi Isolated 2 Type P-Channel Small Signal 20 V Enhancement, 6-Pin SOT-563
- onsemi Isolated 2 Type P-Channel Small Signal 20 V Enhancement, 6-Pin SOT-563 NTZD3152PT1G
- DiodesZetex Isolated 2 Type N 700 mA 6-Pin SOT-563
- DiodesZetex Isolated 2 Type N 700 mA 6-Pin SOT-563 DMC2400UV-7
- onsemi Isolated PowerTrench 2 Type P-Channel MOSFET 20 V Enhancement, 6-Pin SC-89