Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 onsemi NTJD4152PT1G

RS Stock No.:: 163-1117
Mfr. Part No.:: NTJD4152PT1G
Manufacturer:: onsemi

Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 onsemi NTJD4152PT1G

This image is representative of the product range

Price Each (On a Reel of 3000)

SGD0.178

(exc. GST)

SGD0.194

(inc. GST)

23425 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Reel**
3000 +	SGD0.178	SGD534.00

**price indicative

RS Stock No.:: 163-1117
Mfr. Part No.:: NTJD4152PT1G
Manufacturer:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	880 mA
Maximum Drain Source Voltage	20 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	1 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	350 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-12 V, +12 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	2.2mm
Width	1.35mm
Typical Gate Charge @ Vgs	2.2 nC @ 4.5 V
Number of Elements per Chip	2
Height	1mm
Minimum Operating Temperature	-55 °C

Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 onsemi NTJD4152PT1G

Dual P-Channel MOSFET, ON Semiconductor

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