Dual N/P-Channel-Channel MOSFET, 250 mA, 880 mA, 20 V, 30 V, 6-Pin SOT-363 onsemi NTJD4158CT1G

RS Stock No.:: 780-0614
Mfr. Part No.:: NTJD4158CT1G
Manufacturer:: onsemi

Dual N/P-Channel-Channel MOSFET, 250 mA, 880 mA, 20 V, 30 V, 6-Pin SOT-363 onsemi NTJD4158CT1G

This image is representative of the product range

Bulk discount available

Price Each (On a Tape of 25)**

SGD0.232

(exc. GST)

SGD0.253

(inc. GST)

Temporarily out of stock - back order for despatch 11/05/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD250.00 (ex GST)

Units	Per unit	Per Tape**
25 - 25	SGD0.232	SGD5.80
50 - 100	SGD0.227	SGD5.675
125 - 225	SGD0.22	SGD5.50
250 - 475	SGD0.214	SGD5.35
500 +	SGD0.207	SGD5.175

**price indicative

RS Stock No.:: 780-0614
Mfr. Part No.:: NTJD4158CT1G
Manufacturer:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	250 mA, 880 mA
Maximum Drain Source Voltage	20 V, 30 V
Package Type	SOT-363 (SC-88)
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	2.5 Ω, 500 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	270 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, -12 V, +12 V, +20 V
Maximum Operating Temperature	+150 °C
Length	2.2mm
Typical Gate Charge @ Vgs	0.9 nC @ 5 V, 2.2 nC @ 4.5 V
Number of Elements per Chip	2
Width	1.35mm
Transistor Material	Si
Height	1mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 250 mA, 880 mA, 20 V, 30 V, 6-Pin SOT-363 onsemi NTJD4158CT1G

FREE delivery for orders over SGD250.00 (ex GST)

Dual N/P-Channel MOSFET, ON Semiconductor

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