DiodesZetex Isolated 2 Type P, Type N-Channel MOSFET, 540 mA, 20 V Enhancement, 6-Pin SC-88 DMC2004DWK-7
- RS Stock No.:
- 751-4054
- Mfr. Part No.:
- DMC2004DWK-7
- Manufacturer:
- DiodesZetex
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Subtotal (1 pack of 25 units)*
SGD12.20
(exc. GST)
SGD13.30
(inc. GST)
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In Stock
- Plus 9,225 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD0.488 | SGD12.20 |
| 50 - 100 | SGD0.478 | SGD11.95 |
| 125 - 225 | SGD0.463 | SGD11.58 |
| 250 - 475 | SGD0.449 | SGD11.23 |
| 500 + | SGD0.436 | SGD10.90 |
*price indicative
- RS Stock No.:
- 751-4054
- Mfr. Part No.:
- DMC2004DWK-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 540mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | -8/8 V | |
| Maximum Power Dissipation Pd | 250mW | |
| Maximum Operating Temperature | -65°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | AEC-Q101, MIL-STD-202, RoHS, J-STD-020, UL 94V-0 | |
| Length | 2.2mm | |
| Height | 1mm | |
| Width | 1.35 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 540mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs -8/8 V | ||
Maximum Power Dissipation Pd 250mW | ||
Maximum Operating Temperature -65°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals AEC-Q101, MIL-STD-202, RoHS, J-STD-020, UL 94V-0 | ||
Length 2.2mm | ||
Height 1mm | ||
Width 1.35 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101 | ||
- COO (Country of Origin):
- CN
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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