Essential and Operational Technologies

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	P
	Maximum Continuous Drain Current	830 mA
	Maximum Drain Source Voltage	20 V
	Package Type	SC-89-6
	Series	PowerTrench
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	1.8 Ω
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	0.4V
	Maximum Power Dissipation	625 mW
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-8 V, +8 V
	Width	1.2mm
	Typical Gate Charge @ Vgs	2.2 nC @ 4.5 V
	Number of Elements per Chip	2
	Length	1.7mm
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Height	0.6mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type P
	Maximum Continuous Drain Current 830 mA
	Maximum Drain Source Voltage 20 V
	Package Type SC-89-6
	Series PowerTrench
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 1.8 Ω
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 0.4V
	Maximum Power Dissipation 625 mW
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -8 V, +8 V
	Width 1.2mm
	Typical Gate Charge @ Vgs 2.2 nC @ 4.5 V
	Number of Elements per Chip 2
	Length 1.7mm
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Height 0.6mm
	Minimum Operating Temperature -55 °C

onsemi PowerTrench Dual P-Channel MOSFET, 830 mA, 20 V, 6-Pin SC-89-6 FDY1002PZ

FREE delivery for orders over SGD150.00 (ex GST)

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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