Infineon Dual OptiMOS 1 Type P, Type N-Channel MOSFET Arrays, 2.3 A, 30 V Enhancement, 6-Pin TSOP BSL308CH6327XTSA1

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SGD30.15

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SGD32.85

(inc. GST)

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Units
Per unit
Per Pack*
50 - 50SGD0.603SGD30.15
100 - 100SGD0.585SGD29.25
150 - 200SGD0.567SGD28.35
250 - 450SGD0.55SGD27.50
500 +SGD0.534SGD26.70

*price indicative

Packaging Options:
RS Stock No.:
214-4335
Mfr. Part No.:
BSL308CH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET Arrays

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

2.3A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOS

Package Type

TSOP

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

57mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

-5nC

Maximum Power Dissipation Pd

0.6W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

IEC61249-2-21, RoHS

Length

2.9mm

Width

1.6 mm

Height

1mm

Number of Elements per Chip

1

Distrelec Product Id

304-39-398

Automotive Standard

AEC-Q101

This Infineon OptimOS P3 + OptiMOS 2 MOSFET- an n-channel and a p-channel power MOSFET within the same package-is high efficiency solution for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). It is Avalanche rated

It is 100% lead-free and RoHS compliant

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