MPN

Infineon Dual IRF7343PbF 1 Type P, Type N-Channel MOSFET, 4.7 A, 55 V Depletion, 8-Pin SO-8 IRF7343TRPBF

RS Stock No.:: 171-1915
Mfr. Part No.:: IRF7343TRPBF
Manufacturer:: Infineon

Infineon Dual IRF7343PbF 1 Type P, Type N-Channel MOSFET, 4.7 A, 55 V Depletion, 8-Pin SO-8 IRF7343TRPBF

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 10 units)*

SGD12.94

(exc. GST)

SGD14.10

(inc. GST)

FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28

Temporarily out of stock

3,780 unit(s) shipping from 26 March 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 90	SGD1.294	SGD12.94
100 - 490	SGD1.267	SGD12.67
500 - 990	SGD1.228	SGD12.28
1000 - 1990	SGD1.191	SGD11.91
2000 +	SGD1.155	SGD11.55

*price indicative

RS Stock No.:: 171-1915
Mfr. Part No.:: IRF7343TRPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P, Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.7A
	Maximum Drain Source Voltage Vds	55V
	Package Type	SO-8
	Series	IRF7343PbF
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	170mΩ
	Channel Mode	Depletion
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2W
	Forward Voltage Vf	0.96V
	Typical Gate Charge Qg @ Vgs	24nC
	Maximum Gate Source Voltage Vgs	20 V
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Height	1.5mm
	Length	5mm
	Width	4 mm
	Standards/Approvals	No
	Number of Elements per Chip	1
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type P, Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.7A
	Maximum Drain Source Voltage Vds 55V
	Package Type SO-8
	Series IRF7343PbF
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 170mΩ
	Channel Mode Depletion
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2W
	Forward Voltage Vf 0.96V
	Typical Gate Charge Qg @ Vgs 24nC
	Maximum Gate Source Voltage Vgs 20 V
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Height 1.5mm
	Length 5mm
	Width 4 mm
	Standards/Approvals No
	Number of Elements per Chip 1
	Automotive Standard No

Non Compliant

The Infineon IRF7343 is the 55V dual N- and P- channel HEXFET power MOSFET in a SO-8 package.

RoHS Compliant

Low RDS(on)

Dynamic dv/dt rating

Fast switching

Infineon Dual IRF7343PbF 1 Type P, Type N-Channel MOSFET, 4.7 A, 55 V Depletion, 8-Pin SO-8 IRF7343TRPBF

FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28

Related links