MPN

Infineon Dual IRF7343PbF 1 Type P, Type N-Channel MOSFET, 4.7 A, 55 V Depletion, 8-Pin SO-8 IRF7343TRPBF

RS Stock No.:: 171-1915
Mfr. Part No.:: IRF7343TRPBF
Manufacturer:: Infineon

Infineon Dual IRF7343PbF 1 Type P, Type N-Channel MOSFET, 4.7 A, 55 V Depletion, 8-Pin SO-8 IRF7343TRPBF

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 10 units)*

SGD11.40

(exc. GST)

SGD12.40

(inc. GST)

FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28

Temporarily out of stock

3,990 unit(s) shipping from 16 April 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 90	SGD1.14	SGD11.40
100 - 490	SGD1.116	SGD11.16
500 - 990	SGD1.082	SGD10.82
1000 - 1990	SGD1.049	SGD10.49
2000 +	SGD1.017	SGD10.17

*price indicative

RS Stock No.:: 171-1915
Mfr. Part No.:: IRF7343TRPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P, Type N
	Maximum Continuous Drain Current Id	4.7A
	Maximum Drain Source Voltage Vds	55V
	Package Type	SO-8
	Series	IRF7343PbF
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	170mΩ
	Channel Mode	Depletion
	Typical Gate Charge Qg @ Vgs	24nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2W
	Forward Voltage Vf	0.96V
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Width	4 mm
	Length	5mm
	Standards/Approvals	No
	Height	1.5mm
	Number of Elements per Chip	1
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P, Type N
	Maximum Continuous Drain Current Id 4.7A
	Maximum Drain Source Voltage Vds 55V
	Package Type SO-8
	Series IRF7343PbF
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 170mΩ
	Channel Mode Depletion
	Typical Gate Charge Qg @ Vgs 24nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2W
	Forward Voltage Vf 0.96V
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Width 4 mm
	Length 5mm
	Standards/Approvals No
	Height 1.5mm
	Number of Elements per Chip 1
	Automotive Standard No

Non Compliant

The Infineon IRF7343 is the 55V dual N- and P- channel HEXFET power MOSFET in a SO-8 package.

RoHS Compliant

Low RDS(on)

Dynamic dv/dt rating

Fast switching

Infineon Dual IRF7343PbF 1 Type P, Type N-Channel MOSFET, 4.7 A, 55 V Depletion, 8-Pin SO-8 IRF7343TRPBF

FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28

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