Infineon Dual IRF7343PbF 1 Type P, Type N-Channel MOSFET, 4.7 A, 55 V Depletion, 8-Pin SO-8 IRF7343TRPBF

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Subtotal (1 pack of 10 units)*

SGD13.30

(exc. GST)

SGD14.50

(inc. GST)

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Units
Per unit
Per Pack*
10 - 90SGD1.33SGD13.30
100 - 490SGD1.302SGD13.02
500 - 990SGD1.262SGD12.62
1000 - 1990SGD1.224SGD12.24
2000 +SGD1.187SGD11.87

*price indicative

Packaging Options:
RS Stock No.:
171-1915
Mfr. Part No.:
IRF7343TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.7A

Maximum Drain Source Voltage Vds

55V

Series

IRF7343PbF

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

170mΩ

Channel Mode

Depletion

Typical Gate Charge Qg @ Vgs

24nC

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

0.96V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Length

5mm

Standards/Approvals

No

Height

1.5mm

Number of Elements per Chip

1

Automotive Standard

No

Non Compliant

The Infineon IRF7343 is the 55V dual N- and P- channel HEXFET power MOSFET in a SO-8 package.

RoHS Compliant

Low RDS(on)

Dynamic dv/dt rating

Fast switching

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