DiodesZetex Isolated 2 Type N, Type N, Type P, Type P-Channel MOSFET, 4.7 A, 60 V Enhancement, 8-Pin SOIC ZXMC4559DN8TA
- RS Stock No.:
- 122-3286
- Mfr. Part No.:
- ZXMC4559DN8TA
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 500 units)*
SGD484.50
(exc. GST)
SGD528.00
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 500 - 1000 | SGD0.969 | SGD484.50 |
| 1500 - 2000 | SGD0.933 | SGD466.50 |
| 2500 + | SGD0.874 | SGD437.00 |
*price indicative
- RS Stock No.:
- 122-3286
- Mfr. Part No.:
- ZXMC4559DN8TA
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type N, Type P, Type P | |
| Maximum Continuous Drain Current Id | 4.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Mount Type | Surface, Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Forward Voltage Vf | 0.85V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Height | 1.5mm | |
| Width | 3.95mm | |
| Standards/Approvals | No | |
| Length | 4.95mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N, Type N, Type P, Type P | ||
Maximum Continuous Drain Current Id 4.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Mount Type Surface, Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Forward Voltage Vf 0.85V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 2.1W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Height 1.5mm | ||
Width 3.95mm | ||
Standards/Approvals No | ||
Length 4.95mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Related links
- DiodesZetex Isolated 2 Type N 10.5 A 8-Pin SOIC
- DiodesZetex Isolated 2 Type N 7.6 A 8-Pin SOIC
- DiodesZetex Isolated 2 Type N 7.6 A 8-Pin SOIC DMC3028LSDX-13
- DiodesZetex Isolated 2 Type N 10.5 A 8-Pin SOIC DMC3016LSD-13
- onsemi Isolated PowerTrench 2 Type N Type P 6.2 A 8-Pin SOIC
- DiodesZetex Isolated 2 Type P 8.5 A 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N 6.2 A 8-Pin SOIC FDS4897C
- Infineon Isolated HEXFET 2 Type N 4 A 8-Pin SOIC