Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

RS Stock No.:: 812-3233
Mfr. Part No.:: SI4599DY-T1-GE3
Manufacturer:: Vishay

Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 20 units)**

SGD21.18

(exc. GST)

SGD23.08

(inc. GST)

9820 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD250.00 (ex GST)

Units	Per unit	Per Pack**
20 - 20	SGD1.059	SGD21.18
40 - 80	SGD0.931	SGD18.62
100 - 180	SGD0.861	SGD17.22
200 - 380	SGD0.775	SGD15.50
400 +	SGD0.74	SGD14.80

**price indicative

RS Stock No.:: 812-3233
Mfr. Part No.:: SI4599DY-T1-GE3
Manufacturer:: Vishay

Si4599DY, N- and P-Channel 40V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.7 A, 6.8 A
Maximum Drain Source Voltage	40 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	42.5 mΩ, 62 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	3 W, 3.1 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Length	5mm
Width	4mm
Transistor Material	Si
Typical Gate Charge @ Vgs	11.7 nC @ 10 V, 25 nC @ 10 V
Height	1.55mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

FREE delivery for orders over SGD250.00 (ex GST)

Dual N/P-Channel MOSFET, Vishay Semiconductor

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