Vishay Isolated TrenchFET 2 Type N, Type P-Channel MOSFET, 8 A, 40 V Enhancement, 8-Pin SOIC SI4564DY-T1-GE3

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Subtotal (1 pack of 10 units)*

SGD16.34

(exc. GST)

SGD17.81

(inc. GST)

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Units
Per unit
Per Pack*
10 - 20SGD1.634SGD16.34
30 - 40SGD1.573SGD15.73
50 +SGD1.475SGD14.75

*price indicative

Packaging Options:
RS Stock No.:
812-3230
Mfr. Part No.:
SI4564DY-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
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Brand

Vishay

Channel Type

Type N, Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

40V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

20mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

20.5nC

Maximum Power Dissipation Pd

3.2W

Minimum Operating Temperature

150°C

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Height

1.55mm

Length

5mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

Dual N/P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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