DiodesZetex Isolated 2 Type N, Type P-Channel MOSFET, 10.5 A, 30 V Enhancement, 8-Pin SOIC DMC3016LSD-13
- RS Stock No.:
- 921-1010
- Mfr. Part No.:
- DMC3016LSD-13
- Manufacturer:
- DiodesZetex
Bulk discount available
View bulk pricing optionsSubtotal (20 units, in packs of 20)*
SGD14.82
(exc. GST)
SGD16.16
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 20 unit(s) shipping from 05 October 2026
- Plus 2,620 unit(s) shipping from 12 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | SGD0.741 | SGD14.82 |
| 100 - 480 | SGD0.705 | SGD14.10 |
| 500 - 980 | SGD0.668 | SGD13.36 |
| 1000 - 2480 | SGD0.634 | SGD12.68 |
| 2500 + | SGD0.602 | SGD12.04 |
*price indicative
- RS Stock No.:
- 921-1010
- Mfr. Part No.:
- DMC3016LSD-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 11.3nC | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +150°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | RoHS, UL 94V-0, AEC-Q101, MIL-STD-202, J-STD-020 | |
| Length | 4.95mm | |
| Width | 3.95mm | |
| Height | 1.5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 11.3nC | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +150°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals RoHS, UL 94V-0, AEC-Q101, MIL-STD-202, J-STD-020 | ||
Length 4.95mm | ||
Width 3.95mm | ||
Height 1.5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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