Vishay Dual TrenchFET 2 Type N, Type P-Channel MOSFET, 3.9 A, 20 V Enhancement, 6-Pin TSOP SI3585CDV-T1-GE3
- RS Stock No.:
- 180-7911
- Mfr. Part No.:
- SI3585CDV-T1-GE3
- Manufacturer:
- Vishay
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View bulk pricing optionSubtotal (1 pack of 20 units)*
SGD13.02
(exc. GST)
SGD14.20
(inc. GST)
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In Stock
- 2,720 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | SGD0.651 | SGD13.02 |
| 40 - 80 | SGD0.637 | SGD12.74 |
| 100 - 480 | SGD0.618 | SGD12.36 |
| 500 - 980 | SGD0.60 | SGD12.00 |
| 1000 + | SGD0.583 | SGD11.66 |
*price indicative
- RS Stock No.:
- 180-7911
- Mfr. Part No.:
- SI3585CDV-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSOP | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.4W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Height | 1mm | |
| Length | 3.05mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSOP | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.4W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Height 1mm | ||
Length 3.05mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount dual channel (both P and N-channels) MOSFET is a new age product with a drain-source voltage of 20V. The MOSFET has a drain-source resistance of 58mohm at a gate-source voltage of 4.5V. It has continuous drain currents of 3.9A and 2.1A. It has a maximum power rating of 1.4W and 1.3W. It has been optimized, for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• DC/DC converters
• Drivers: motor, solenoid, relay
• Load switch for portable devices
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
Related links
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- Vishay Dual TrenchFET 2 Type P 4 A 8-Pin PowerPAK 1212-8 Dual
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 30 V Enhancement, 6-Pin TSOP
- Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET 30 V Enhancement, 6-Pin TSOP SI3993CDV-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAIR 6 x 5F
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAIR 6 x 5F SiZF906BDT-T1-GE3