Infineon Isolated OptiMOS™ 2 Type N, Type P-Channel MOSFET, 1.5 A, 30 V Enhancement, 6-Pin TSOP-6 BSL316CH6327XTSA1
- RS Stock No.:
- 110-7129
- Mfr. Part No.:
- BSL316CH6327XTSA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 60 units)*
SGD31.80
(exc. GST)
SGD34.80
(inc. GST)
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In Stock
- Plus 31,080 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 60 - 60 | SGD0.53 | SGD31.80 |
| 120 - 540 | SGD0.471 | SGD28.26 |
| 600 - 1140 | SGD0.353 | SGD21.18 |
| 1200 - 2940 | SGD0.326 | SGD19.56 |
| 3000 + | SGD0.294 | SGD17.64 |
*price indicative
- RS Stock No.:
- 110-7129
- Mfr. Part No.:
- BSL316CH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSOP-6 | |
| Series | OptiMOS™ | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 2.4nC | |
| Forward Voltage Vf | 0.86V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500mW | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Width | 1.6 mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Distrelec Product Id | 304-36-975 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSOP-6 | ||
Series OptiMOS™ | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 2.4nC | ||
Forward Voltage Vf 0.86V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500mW | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Width 1.6 mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Distrelec Product Id 304-36-975 | ||
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
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