Dual N/P-Channel-Channel MOSFET, 1.4 A, 1.5 A, 30 V, 6-Pin TSOP-6 Infineon BSL316CH6327XTSA1

RS Stock No.:: 110-7129
Mfr. Part No.:: BSL316CH6327XTSA1
Manufacturer:: Infineon

Dual N/P-Channel-Channel MOSFET, 1.4 A, 1.5 A, 30 V, 6-Pin TSOP-6 Infineon BSL316CH6327XTSA1

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 60)

SGD0.611

(exc. GST)

SGD0.666

(inc. GST)

31260 In Global stock for delivery within 4 working day(s)*

3000 In Global stock for delivery within 4 working day(s)

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD250.00 (ex GST)

Units	Per unit	Per Pack**
60 - 60	SGD0.611	SGD36.66
120 - 540	SGD0.543	SGD32.58
600 - 1140	SGD0.407	SGD24.42
1200 - 2940	SGD0.376	SGD22.56
3000 +	SGD0.339	SGD20.34

**price indicative

RS Stock No.:: 110-7129
Mfr. Part No.:: BSL316CH6327XTSA1
Manufacturer:: Infineon

BSL316C OptiMOS Dual Small Signal MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	1.4 A, 1.5 A
Maximum Drain Source Voltage	30 V
Series	OptiMOS™
Package Type	TSOP-6
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	270 mΩ, 280 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	500 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Length	2.9mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	0.6 nC @ 5 V, 2.4 nC @ 5 V
Transistor Material	Si
Width	1.6mm
Height	1mm
Forward Diode Voltage	1.1V
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 1.4 A, 1.5 A, 30 V, 6-Pin TSOP-6 Infineon BSL316CH6327XTSA1

FREE delivery for orders over SGD250.00 (ex GST)

Infineon OptiMOS™ Dual Power MOSFET

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