Infineon Isolated OptiMOS 2 2 Type N-Channel MOSFET, 950 mA, 20 V Enhancement, 6-Pin SC-88 BSD235NH6327XTSA1
- RS Stock No.:
- 165-5872
- Mfr. Part No.:
- BSD235NH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 reel of 3000 units)*
SGD381.00
(exc. GST)
SGD414.00
(inc. GST)
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In Stock
- Plus 6,000 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 6000 | SGD0.127 | SGD381.00 |
| 9000 - 12000 | SGD0.123 | SGD369.00 |
| 15000 + | SGD0.115 | SGD345.00 |
*price indicative
- RS Stock No.:
- 165-5872
- Mfr. Part No.:
- BSD235NH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 950mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-88 | |
| Series | OptiMOS 2 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.32nC | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500mW | |
| Forward Voltage Vf | 0.9V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Length | 2mm | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Width | 1.25 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 950mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-88 | ||
Series OptiMOS 2 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.32nC | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500mW | ||
Forward Voltage Vf 0.9V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Length 2mm | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Width 1.25 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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