Infineon Isolated OptiMOS 2 2 N-Channel MOSFET, 950 mA, 20 V Enhancement, 6-Pin SC-88 BSD235NH6327XTSA1

RS Stock No.:: 165-5872
Mfr. Part No.:: BSD235NH6327XTSA1
Manufacturer:: Infineon

Infineon Isolated OptiMOS 2 2 N-Channel MOSFET, 950 mA, 20 V Enhancement, 6-Pin SC-88 BSD235NH6327XTSA1

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SGD417.00

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SGD456.00

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Units	Per unit	Per Reel*
3000 - 6000	SGD0.139	SGD417.00
9000 - 12000	SGD0.134	SGD402.00
15000 +	SGD0.125	SGD375.00

*price indicative

RS Stock No.:: 165-5872
Mfr. Part No.:: BSD235NH6327XTSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	950mA
	Maximum Drain Source Voltage Vds	20V
	Series	OptiMOS 2
	Package Type	SC-88
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	600mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	-12V, +12V
	Forward Voltage Vf	900mV
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	0.32nC
	Maximum Power Dissipation Pd	500mW
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Width	1.25mm
	Standards/Approvals	No
	Height	800μm
	Length	2mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 950mA
	Maximum Drain Source Voltage Vds 20V
	Series OptiMOS 2
	Package Type SC-88
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 600mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs -12V, +12V
	Forward Voltage Vf 900mV
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 0.32nC
	Maximum Power Dissipation Pd 500mW
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Width 1.25mm
	Standards/Approvals No
	Height 800μm
	Length 2mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

COO (Country of Origin):: CN

Infineon OptiMOS 2 Series MOSFET, 20V Maximum Drain Source Voltage, 600mΩ Maximum Drain Source Resistance - BSD235NH6327XTSA1

This MOSFET is a compact, surface-mounted N-channel transistor designed for switching and power-management tasks in automotive and industrial environments. It operates as an enhancement-mode device with an isolated transistor configuration and is intended for applications requiring low gate charge switching and thermal endurance at elevated temperatures.

Features and Benefits:

• 20V maximum drain voltage enables safe low-voltage switching
• 600 mΩ RDS(on) reduces conduction losses during operation
• 0.32 nC typical gate charge delivers fast, low-driving-energy switching
• 950 mA continuous drain current supports modest load currents
• 500 mW power dissipation allows sustained operation under load
• AEC‑Q101 qualification suits automotive electronics testing

Applications

• Suitable for supply-rail switching in automotive modules
• Ideal for load switching in body-control units
• Used for gate drivers and secondary-side power stages
• Can be used for compact power management in ubiquitous SMD designs
• Appropriate for dual-channel switching in sensor interfaces

What gate-drive limits should be observed for safe operation?

The device accepts gate-source voltages up to 12V maximum

ensure drive circuits remain within this limit to avoid gate-oxide stress.

How does thermal range affect placement in designs?

It operates between -55 °C and 150 °C, permitting placement near heat‑generating components but still requiring thermal consideration for PCB copper area and airflow to manage 500 mW dissipation.

How many discrete elements are provided on the die?

The chip contains two elements, useful where paired switching channels are needed in a single package.

What physical package constraints influence PCB layout?

The component is supplied in an SC-88 package with six pins, so footprint planning must accommodate the small SMD pin array and clearance for solder fillets.