Dual N-Channel MOSFET, 860 mA, 20 V, 6-Pin SOT-363 Nexperia PMGD290XN,115

RS Stock No.:: 166-0612
Mfr. Part No.:: PMGD290XN,115
Manufacturer:: Nexperia

Dual N-Channel MOSFET, 860 mA, 20 V, 6-Pin SOT-363 Nexperia PMGD290XN,115

This image is representative of the product range

Subtotal (1 reel of 3000 units)**

SGD399.00

(exc. GST)

SGD435.00

(inc. GST)

5220 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD250.00 (ex GST)

Units	Per unit	Per Reel**
3000 +	SGD0.133	SGD399.00

**price indicative

RS Stock No.:: 166-0612
Mfr. Part No.:: PMGD290XN,115
Manufacturer:: Nexperia

Trans MOSFET NCH 20V 0.86A 6Pin UMT
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	860 mA
Maximum Drain Source Voltage	20 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	350 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.5V
Minimum Gate Threshold Voltage	0.5V
Maximum Power Dissipation	410 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-12 V, +12 V
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Width	1.35mm
Length	2.2mm
Typical Gate Charge @ Vgs	0.72 nC @ 4.5 V
Transistor Material	Si
Height	1mm
Minimum Operating Temperature	-55 °C

Dual N-Channel MOSFET, 860 mA, 20 V, 6-Pin SOT-363 Nexperia PMGD290XN,115

FREE delivery for orders over SGD250.00 (ex GST)

Dual N-Channel MOSFET, Nexperia

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