Dual N-Channel MOSFET, 860 mA, 20 V, 6-Pin SOT-363 Nexperia PMGD290XN,115

RS Stock No.:: 166-0612
Mfr. Part No.:: PMGD290XN,115
Manufacturer:: Nexperia

Dual N-Channel MOSFET, 860 mA, 20 V, 6-Pin SOT-363 Nexperia PMGD290XN,115

This image is representative of the product range

Price Each (On a Reel of 3000)

SGD0.147

(exc. GST)

SGD0.16

(inc. GST)

5220 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Reel**
3000 +	SGD0.147	SGD441.00

**price indicative

RS Stock No.:: 166-0612
Mfr. Part No.:: PMGD290XN,115
Manufacturer:: Nexperia

Trans MOSFET NCH 20V 0.86A 6Pin UMT
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	860 mA
Maximum Drain Source Voltage	20 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	350 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.5V
Minimum Gate Threshold Voltage	0.5V
Maximum Power Dissipation	410 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-12 V, +12 V
Width	1.35mm
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	0.72 nC @ 4.5 V
Transistor Material	Si
Length	2.2mm
Minimum Operating Temperature	-55 °C
Height	1mm

Dual N-Channel MOSFET, 860 mA, 20 V, 6-Pin SOT-363 Nexperia PMGD290XN,115

Dual N-Channel MOSFET, Nexperia

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