Nexperia Isolated Trench MOSFET 2 Type N-Channel MOSFET, 350 mA, 30 V Enhancement, 6-Pin SC-88 NX3008NBKS,115
- RS Stock No.:
- 865-2182
- Mfr. Part No.:
- NX3008NBKS,115
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 100 units)*
SGD20.10
(exc. GST)
SGD21.90
(inc. GST)
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Temporarily out of stock
- 3,000 unit(s) shipping from 10 June 2026
- Plus 6,000 unit(s) shipping from 12 August 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 100 | SGD0.201 | SGD20.10 |
| 200 - 400 | SGD0.194 | SGD19.40 |
| 500 - 900 | SGD0.189 | SGD18.90 |
| 1000 - 1900 | SGD0.184 | SGD18.40 |
| 2000 + | SGD0.178 | SGD17.80 |
*price indicative
- RS Stock No.:
- 865-2182
- Mfr. Part No.:
- NX3008NBKS,115
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Trench MOSFET | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2.8Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 0.52nC | |
| Maximum Power Dissipation Pd | 445mW | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 2.2mm | |
| Width | 1.35 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Trench MOSFET | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2.8Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 0.52nC | ||
Maximum Power Dissipation Pd 445mW | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 2.2mm | ||
Width 1.35 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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