Nexperia Isolated Trench MOSFET 2 N-Channel MOSFET, 860 mA, 20 V Enhancement, 6-Pin SC-88 PMGD290XN,115
- RS Stock No.:
- 725-8394
- Mfr. Part No.:
- PMGD290XN,115
- Manufacturer:
- Nexperia
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
SGD7.82
(exc. GST)
SGD8.52
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | SGD0.391 | SGD7.82 |
| 40 - 80 | SGD0.381 | SGD7.62 |
| 100 - 180 | SGD0.354 | SGD7.08 |
| 200 - 380 | SGD0.338 | SGD6.76 |
| 400 + | SGD0.331 | SGD6.62 |
*price indicative
- RS Stock No.:
- 725-8394
- Mfr. Part No.:
- PMGD290XN,115
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 860mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-88 | |
| Series | Trench MOSFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.72nC | |
| Maximum Power Dissipation Pd | 410mW | |
| Forward Voltage Vf | 800mV | |
| Maximum Gate Source Voltage Vgs | -12V, +12V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.2mm | |
| Height | 1mm | |
| Width | 1.35mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 860mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-88 | ||
Series Trench MOSFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.72nC | ||
Maximum Power Dissipation Pd 410mW | ||
Forward Voltage Vf 800mV | ||
Maximum Gate Source Voltage Vgs -12V, +12V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Length 2.2mm | ||
Height 1mm | ||
Width 1.35mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Dual N-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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