Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 Infineon 2N7002DWH6327XTSA1

RS Stock No.:: 827-0002
Mfr. Part No.:: 2N7002DWH6327XTSA1
Manufacturer:: Infineon

Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 Infineon 2N7002DWH6327XTSA1

This image is representative of the product range

Bulk discount available

Price Each (On a Reel of 500)

SGD0.137

(exc. GST)

SGD0.149

(inc. GST)

15000 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Reel**
500 - 500	SGD0.137	SGD68.50
1000 - 2000	SGD0.133	SGD66.50
2500 - 4500	SGD0.129	SGD64.50
5000 +	SGD0.125	SGD62.50

**price indicative

RS Stock No.:: 827-0002
Mfr. Part No.:: 2N7002DWH6327XTSA1
Manufacturer:: Infineon

2N7002DW OptiMOS Small-Signal-Transistor Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	300 mA
Maximum Drain Source Voltage	60 V
Series	OptiMOS™
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	4 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.5V
Minimum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	500 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	0.4 nC @ 10 V
Width	1.25mm
Length	2mm
Number of Elements per Chip	2
Transistor Material	Si
Height	0.8mm
Minimum Operating Temperature	-55 °C

Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 Infineon 2N7002DWH6327XTSA1

Infineon OptiMOS™ Dual Power MOSFET

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