DiodesZetex Isolated 2 Type N-Channel MOSFET, 115 mA, 60 V Enhancement, 6-Pin SC-88 2N7002DW-7-F
- RS Stock No.:
- 708-2529
- Mfr. Part No.:
- 2N7002DW-7-F
- Manufacturer:
- DiodesZetex
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Subtotal (1 pack of 25 units)*
SGD3.70
(exc. GST)
SGD4.025
(inc. GST)
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In Stock
- Plus 675 unit(s) shipping from 29 December 2025
- Plus 325 unit(s) shipping from 29 December 2025
- Plus 392,500 unit(s) shipping from 05 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | SGD0.148 | SGD3.70 |
| 125 + | SGD0.122 | SGD3.05 |
*price indicative
- RS Stock No.:
- 708-2529
- Mfr. Part No.:
- 2N7002DW-7-F
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 115mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 13.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 200mW | |
| Forward Voltage Vf | 0.78V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.35 mm | |
| Height | 1mm | |
| Length | 2.2mm | |
| Standards/Approvals | UL 94V-0, MIL-STD-202, RoHS, AEC-Q101 Standards, J-STD-020C | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 115mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 13.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 200mW | ||
Forward Voltage Vf 0.78V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Width 1.35 mm | ||
Height 1mm | ||
Length 2.2mm | ||
Standards/Approvals UL 94V-0, MIL-STD-202, RoHS, AEC-Q101 Standards, J-STD-020C | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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