Vishay TrenchFET Type N-Channel MOSFET, 100 A, 80 V Enhancement, 8-Pin SO-8 SIR680DP-T1-RE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 2 units)*

SGD6.96

(exc. GST)

SGD7.58

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 5,990 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 198SGD3.48SGD6.96
200 - 398SGD3.44SGD6.88
400 - 798SGD3.365SGD6.73
800 - 2398SGD3.225SGD6.45
2400 +SGD2.82SGD5.64

*price indicative

Packaging Options:
RS Stock No.:
134-9727
Mfr. Part No.:
SIR680DP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

104W

Typical Gate Charge Qg @ Vgs

69.5nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.25mm

Height

1.12mm

Width

5.26 mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links