Vishay TrenchFET N-Channel MOSFET, 146 A, 80 V Enhancement, 8-Pin SO-8 SiR580DP-T1-RE3

This image is representative of the product range

Bulk discount available
View bulk pricing options

Subtotal (1 reel of 3000 units)*

SGD4,638.00

(exc. GST)

SGD5,055.00

(inc. GST)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
Per Reel*
3000 - 3000SGD1.546SGD4,638.00
6000 - 6000SGD1.50SGD4,500.00
9000 +SGD1.454SGD4,362.00

*price indicative

RS Stock No.:
228-2907
Mfr. Part No.:
SiR580DP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

146A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

104W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

50.6nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 80 V MOSFET.

100 % Rg and UIS tested

Related links