Vishay TrenchFET Type N-Channel MOSFET, 146 A, 80 V Enhancement, 8-Pin SO-8 SiR580DP-T1-RE3

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Subtotal (1 pack of 5 units)*

SGD14.49

(exc. GST)

SGD15.795

(inc. GST)

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Units
Per unit
Per Pack*
5 - 45SGD2.898SGD14.49
50 - 95SGD2.608SGD13.04
100 - 245SGD2.348SGD11.74
250 - 995SGD2.114SGD10.57
1000 +SGD1.902SGD9.51

*price indicative

Packaging Options:
RS Stock No.:
228-2908
Mfr. Part No.:
SiR580DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

146A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.7mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

50.6nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

104W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 80 V MOSFET.

100 % Rg and UIS tested

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