Vishay TrenchFET Type N-Channel MOSFET, 70.6 A, 80 V Enhancement, 8-Pin SO-8 SiR880BDP-T1-RE3
- RS Stock No.:
- 228-2914
- Mfr. Part No.:
- SiR880BDP-T1-RE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD14.99
(exc. GST)
SGD16.34
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Being discontinued
- Final 5,560 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | SGD1.499 | SGD14.99 |
| 50 - 90 | SGD1.469 | SGD14.69 |
| 100 - 240 | SGD1.167 | SGD11.67 |
| 250 - 990 | SGD1.144 | SGD11.44 |
| 1000 + | SGD0.763 | SGD7.63 |
*price indicative
- RS Stock No.:
- 228-2914
- Mfr. Part No.:
- SiR880BDP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70.6A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 43.5nC | |
| Maximum Power Dissipation Pd | 71.4W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70.6A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 43.5nC | ||
Maximum Power Dissipation Pd 71.4W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-channel is 80 V MOSFET.
100 % Rg and UIS tested
Related links
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