Vishay Siliconix TrenchFET Type N-Channel MOSFET, 60 A, 60 V Enhancement, 8-Pin SO-8 SiR188DP-T1-RE3
- RS Stock No.:
- 178-3895
- Mfr. Part No.:
- SiR188DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD17.29
(exc. GST)
SGD18.85
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 1,020 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | SGD1.729 | SGD17.29 |
| 50 - 90 | SGD1.643 | SGD16.43 |
| 100 - 490 | SGD1.56 | SGD15.60 |
| 500 - 990 | SGD1.482 | SGD14.82 |
| 1000 + | SGD1.408 | SGD14.08 |
*price indicative
- RS Stock No.:
- 178-3895
- Mfr. Part No.:
- SiR188DP-T1-RE3
- Manufacturer:
- Vishay Siliconix
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 65.7W | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.99mm | |
| Standards/Approvals | No | |
| Width | 5 mm | |
| Height | 1.07mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 65.7W | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5.99mm | ||
Standards/Approvals No | ||
Width 5 mm | ||
Height 1.07mm | ||
Automotive Standard No | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
TrenchFET® Gen IV power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
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