Vishay Siliconix TrenchFET Type N-Channel MOSFET, 60 A, 60 V Enhancement, 8-Pin SO-8 SiR188DP-T1-RE3

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Subtotal (1 pack of 10 units)*

SGD17.29

(exc. GST)

SGD18.85

(inc. GST)

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In Stock
  • 1,020 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
10 - 40SGD1.729SGD17.29
50 - 90SGD1.643SGD16.43
100 - 490SGD1.56SGD15.60
500 - 990SGD1.482SGD14.82
1000 +SGD1.408SGD14.08

*price indicative

Packaging Options:
RS Stock No.:
178-3895
Mfr. Part No.:
SiR188DP-T1-RE3
Manufacturer:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

65.7W

Typical Gate Charge Qg @ Vgs

29nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Width

5 mm

Length

5.99mm

Standards/Approvals

No

Height

1.07mm

Automotive Standard

No

RoHS Status: Exempt

COO (Country of Origin):
CN
TrenchFET® Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

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