Vishay TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SIRA90DP-T1-RE3

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Subtotal (1 pack of 5 units)*

SGD12.54

(exc. GST)

SGD13.67

(inc. GST)

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Per Pack*
5 - 195SGD2.508SGD12.54
200 - 395SGD2.478SGD12.39
400 - 745SGD2.422SGD12.11
750 - 2245SGD2.324SGD11.62
2250 +SGD2.034SGD10.17

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Packaging Options:
RS Stock No.:
134-9698
Mfr. Part No.:
SIRA90DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

102nC

Maximum Power Dissipation Pd

104W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.25mm

Width

5.26 mm

Height

1.12mm

Automotive Standard

No

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