Vishay TrenchFET Type N-Channel MOSFET, 126 A, 100 V Enhancement, 8-Pin SO-8 SiR510DP-T1-RE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 5 units)*

SGD16.72

(exc. GST)

SGD18.225

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 5,260 unit(s) shipping from 31 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 45SGD3.344SGD16.72
50 - 95SGD3.01SGD15.05
100 - 245SGD2.712SGD13.56
250 - 995SGD2.44SGD12.20
1000 +SGD2.198SGD10.99

*price indicative

Packaging Options:
RS Stock No.:
228-2904
Mfr. Part No.:
SiR510DP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

126A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.6mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

104W

Typical Gate Charge Qg @ Vgs

54nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 100 V MOSFET.

100 % Rg and UIS tested

Related links