Vishay TrenchFET Type N-Channel MOSFET, 23.5 A, 100 V Enhancement, 8-Pin SO-8 Si7454FDP-T1-RE3
- RS Stock No.:
- 228-2829
- Mfr. Part No.:
- Si7454FDP-T1-RE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD11.27
(exc. GST)
SGD12.28
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 2,370 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | SGD1.127 | SGD11.27 |
| 50 - 90 | SGD1.093 | SGD10.93 |
| 100 - 240 | SGD1.027 | SGD10.27 |
| 250 - 990 | SGD0.934 | SGD9.34 |
| 1000 + | SGD0.821 | SGD8.21 |
*price indicative
- RS Stock No.:
- 228-2829
- Mfr. Part No.:
- Si7454FDP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 23.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 29.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 39W | |
| Typical Gate Charge Qg @ Vgs | 17.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 23.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 29.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 39W | ||
Typical Gate Charge Qg @ Vgs 17.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.
TrenchFET Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
Related links
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 45 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8