Infineon OptiMOS 3 Type N-Channel MOSFET, 37 A, 150 V Enhancement, 3-Pin TO-220 IPA105N15N3GXKSA1
- RS Stock No.:
- 906-2956
- Distrelec Article No.:
- 304-44-433
- Mfr. Part No.:
- IPA105N15N3GXKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 4 units)*
SGD28.632
(exc. GST)
SGD31.208
(inc. GST)
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Temporarily out of stock
- 500 unit(s) shipping from 06 August 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 4 | SGD7.158 | SGD28.63 |
| 8 - 36 | SGD6.255 | SGD25.02 |
| 40 - 76 | SGD5.285 | SGD21.14 |
| 80 - 196 | SGD4.915 | SGD19.66 |
| 200 + | SGD4.65 | SGD18.60 |
*price indicative
- RS Stock No.:
- 906-2956
- Distrelec Article No.:
- 304-44-433
- Mfr. Part No.:
- IPA105N15N3GXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | OptiMOS 3 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 40.5W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.65mm | |
| Standards/Approvals | No | |
| Height | 16.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series OptiMOS 3 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 40.5W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.65mm | ||
Standards/Approvals No | ||
Height 16.15mm | ||
Automotive Standard No | ||
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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