Toshiba TK N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-3PN TK31J60W5,S1VQ(O
- RS Stock No.:
- 896-2331
- Mfr. Part No.:
- TK31J60W5,S1VQ(O
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
SGD4.36
(exc. GST)
SGD4.75
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 50 unit(s) shipping from 16 January 2026
- Plus 50 unit(s) shipping from 13 February 2026
- Plus 100 unit(s) shipping from 20 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 19 | SGD4.36 |
| 20 - 49 | SGD3.28 |
| 50 - 99 | SGD2.93 |
| 100 - 249 | SGD2.87 |
| 250 + | SGD2.79 |
*price indicative
- RS Stock No.:
- 896-2331
- Mfr. Part No.:
- TK31J60W5,S1VQ(O
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 31 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-3PN | |
| Series | TK | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 99 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.7V | |
| Maximum Power Dissipation | 230 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 105 nC @ 10 V | |
| Length | 15.5mm | |
| Width | 4.5mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Height | 20mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 31 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-3PN | ||
Series TK | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 99 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Maximum Power Dissipation 230 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 105 nC @ 10 V | ||
Length 15.5mm | ||
Width 4.5mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Height 20mm | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba