Toshiba DTMOSIV Type N-Channel MOSFET, 31 A, 600 V Enhancement, 3-Pin TO-247 TK31N60W,S1VF(S
- RS Stock No.:
- 799-5107
- Mfr. Part No.:
- TK31N60W,S1VF(S
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD12.07
(exc. GST)
SGD13.156
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 254 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD6.035 | SGD12.07 |
| 10 - 48 | SGD5.905 | SGD11.81 |
| 50 - 98 | SGD5.725 | SGD11.45 |
| 100 - 198 | SGD5.58 | SGD11.16 |
| 200 + | SGD5.465 | SGD10.93 |
*price indicative
- RS Stock No.:
- 799-5107
- Mfr. Part No.:
- TK31N60W,S1VF(S
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | DTMOSIV | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 88mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.7V | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 230W | |
| Typical Gate Charge Qg @ Vgs | 86nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.95mm | |
| Length | 15.94mm | |
| Standards/Approvals | No | |
| Width | 5.02 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series DTMOSIV | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 88mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.7V | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 230W | ||
Typical Gate Charge Qg @ Vgs 86nC | ||
Maximum Operating Temperature 150°C | ||
Height 20.95mm | ||
Length 15.94mm | ||
Standards/Approvals No | ||
Width 5.02 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Related links
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