Toshiba DTMOSIV N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-247 TK20N60W5,S1VF(S
- RS Stock No.:
- 125-0551
- Mfr. Part No.:
- TK20N60W5,S1VF(S
- Manufacturer:
- Toshiba
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
SGD30.97
(exc. GST)
SGD33.755
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 5 unit(s) shipping from 14 September 2026
- Plus 30 unit(s) shipping from 21 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD6.194 | SGD30.97 |
| 25 - 45 | SGD6.062 | SGD30.31 |
| 50 - 120 | SGD5.88 | SGD29.40 |
| 125 - 245 | SGD5.708 | SGD28.54 |
| 250 + | SGD5.536 | SGD27.68 |
*price indicative
- RS Stock No.:
- 125-0551
- Mfr. Part No.:
- TK20N60W5,S1VF(S
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | DTMOSIV | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 175mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Forward Voltage Vf | -1.7V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 165W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.02mm | |
| Length | 15.94mm | |
| Height | 20.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series DTMOSIV | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 175mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Forward Voltage Vf -1.7V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 165W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.02mm | ||
Length 15.94mm | ||
Height 20.95mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
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