Toshiba DTMOSIV Type N-Channel MOSFET, 20 A, 600 V Enhancement, 4-Pin TO-3P TK20J60W5,S1VQ(O
- RS Stock No.:
- 125-0550
- Mfr. Part No.:
- TK20J60W5,S1VQ(O
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD15.75
(exc. GST)
SGD17.168
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 23 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD7.875 | SGD15.75 |
| 10 - 18 | SGD7.095 | SGD14.19 |
| 20 - 48 | SGD6.455 | SGD12.91 |
| 50 - 98 | SGD5.92 | SGD11.84 |
| 100 + | SGD5.46 | SGD10.92 |
*price indicative
- RS Stock No.:
- 125-0550
- Mfr. Part No.:
- TK20J60W5,S1VQ(O
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | DTMOSIV | |
| Package Type | TO-3P | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 175mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 165W | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Forward Voltage Vf | -1.7V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.5 mm | |
| Length | 15.5mm | |
| Height | 20mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series DTMOSIV | ||
Package Type TO-3P | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 175mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 165W | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Forward Voltage Vf -1.7V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Width 4.5 mm | ||
Length 15.5mm | ||
Height 20mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
Related links
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1VQ(O
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1VQ(O
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1VQ(O
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1VQ(O
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1VF(S
- Toshiba TK Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-3P
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementVQ(O
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS1VQ(O