Toshiba DTMOSIV Type N-Channel MOSFET, 39 A, 600 V Enhancement, 3-Pin TO-3PN TK39J60W5,S1VQ(O
- RS Stock No.:
- 896-2363
- Mfr. Part No.:
- TK39J60W5,S1VQ(O
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
SGD5.67
(exc. GST)
SGD6.18
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 2 unit(s) shipping from 29 December 2025
- Plus 6 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 19 | SGD5.67 |
| 20 - 49 | SGD5.56 |
| 50 - 99 | SGD5.40 |
| 100 - 249 | SGD5.28 |
| 250 + | SGD5.17 |
*price indicative
- RS Stock No.:
- 896-2363
- Mfr. Part No.:
- TK39J60W5,S1VQ(O
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 39A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-3PN | |
| Series | DTMOSIV | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 74mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 135nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 270W | |
| Forward Voltage Vf | -1.7V | |
| Maximum Operating Temperature | 150°C | |
| Height | 20mm | |
| Length | 15.5mm | |
| Standards/Approvals | No | |
| Width | 4.5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 39A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-3PN | ||
Series DTMOSIV | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 74mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 135nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 270W | ||
Forward Voltage Vf -1.7V | ||
Maximum Operating Temperature 150°C | ||
Height 20mm | ||
Length 15.5mm | ||
Standards/Approvals No | ||
Width 4.5 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Related links
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1VQ(O
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1VQ(O
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1VQ(O
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1VQ(O
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS1VQ(O
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementS4VX(M
- Toshiba TK Type N-Channel MOSFET 600 V EnhancementS1VQ(O
- Toshiba DTMOSIV Type N-Channel MOSFET 600 V EnhancementVQ(O