Infineon OptiMOS 3 N-Channel MOSFET, 7 A, 200 V Enhancement, 8-Pin TDSON BSC22DN20NS3GATMA1

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Subtotal (1 pack of 20 units)*

SGD35.40

(exc. GST)

SGD38.60

(inc. GST)

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Units
Per unit
Per Pack*
20 - 20SGD1.77SGD35.40
40 - 80SGD1.486SGD29.72
100 - 180SGD1.331SGD26.62
200 - 380SGD1.329SGD26.58
400 +SGD1.254SGD25.08

*price indicative

Packaging Options:
RS Stock No.:
825-9146
Mfr. Part No.:
BSC22DN20NS3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

200V

Series

OptiMOS 3

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

225mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

34W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

4.2nC

Maximum Gate Source Voltage Vgs

-20V, +20V

Maximum Operating Temperature

150°C

Height

1.1mm

Length

5.35mm

Standards/Approvals

No

Width

6.35mm

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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