Infineon OptiMOS 3 N-Channel MOSFET, 15.2 A, 200 V Enhancement, 8-Pin TDSON BSC900N20NS3GATMA1

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Subtotal (1 pack of 10 units)*

SGD21.30

(exc. GST)

SGD23.20

(inc. GST)

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Units
Per unit
Per Pack*
10 - 40SGD2.13SGD21.30
50 - 240SGD2.086SGD20.86
250 - 490SGD2.021SGD20.21
500 - 1240SGD1.96SGD19.60
1250 +SGD1.902SGD19.02

*price indicative

Packaging Options:
RS Stock No.:
906-4400
Mfr. Part No.:
BSC900N20NS3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

15.2A

Maximum Drain Source Voltage Vds

200V

Series

OptiMOS 3

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

9nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

62.5W

Maximum Gate Source Voltage Vgs

-20V, +20V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

5.35mm

Length

6.1mm

Height

1.1mm

Automotive Standard

No

RoHS Status: Exempt

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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