N-Channel MOSFET, 15.2 A, 200 V, 8-Pin TDSON Infineon BSC900N20NS3GATMA1

RS Stock No.:: 178-7500
Mfr. Part No.:: BSC900N20NS3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 15.2 A, 200 V, 8-Pin TDSON Infineon BSC900N20NS3GATMA1

This image is representative of the product range

Price Each (On a Reel of 5000)

SGD1.117

(exc. GST)

SGD1.218

(inc. GST)

70 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Reel**
5000 +	SGD1.117	SGD5,585.00

**price indicative

RS Stock No.:: 178-7500
Mfr. Part No.:: BSC900N20NS3GATMA1
Manufacturer:: Infineon

BSC900N20NS3 G OptiMOS 3 Power-Transistor

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	15.2 A
Maximum Drain Source Voltage	200 V
Series	OptiMOS™ 3
Package Type	TDSON
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	90 mΩ
Channel Mode	Enhancement
Maximum Power Dissipation	62.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	9 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Width	5.35mm
Number of Elements per Chip	1
Length	6.1mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V
Height	1.1mm

N-Channel MOSFET, 15.2 A, 200 V, 8-Pin TDSON Infineon BSC900N20NS3GATMA1

Infineon OptiMOS™3 Power MOSFETs, 100V and over

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