Infineon OptiMOS 3 Type N-Channel MOSFET, 7 A, 200 V Enhancement, 8-Pin TDSON

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SGD3,015.00

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SGD3,285.00

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Per Reel*
5000 - 10000SGD0.603SGD3,015.00
15000 - 20000SGD0.58SGD2,900.00
25000 +SGD0.544SGD2,720.00

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RS Stock No.:
145-9478
Mfr. Part No.:
BSC22DN20NS3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

200V

Series

OptiMOS 3

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

225mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

34W

Typical Gate Charge Qg @ Vgs

4.2nC

Maximum Operating Temperature

150°C

Length

5.35mm

Height

1.1mm

Width

6.35 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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