P-Channel MOSFET, 2.2 A, 20 V, 3-Pin SOT-23 Vishay SI2367DS-T1-GE3

RS Stock No.:: 812-3136
Mfr. Part No.:: SI2367DS-T1-GE3
Manufacturer:: Vishay

P-Channel MOSFET, 2.2 A, 20 V, 3-Pin SOT-23 Vishay SI2367DS-T1-GE3

This image is representative of the product range

Bulk discount available

Price Each (On a Tape of 50)

SGD0.394

(exc. GST)

SGD0.429

(inc. GST)

2900 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Tape**
50 - 100	SGD0.394	SGD19.70
150 - 200	SGD0.379	SGD18.95
250 +	SGD0.355	SGD17.75

**price indicative

RS Stock No.:: 812-3136
Mfr. Part No.:: SI2367DS-T1-GE3
Manufacturer:: Vishay

Si2367DS, P-Channel 20V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	2.2 A
Maximum Drain Source Voltage	20 V
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	130 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	1.7 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Maximum Operating Temperature	+150 °C
Length	3.04mm
Number of Elements per Chip	1
Transistor Material	Si
Typical Gate Charge @ Vgs	15 nC @ 8 V
Width	1.4mm
Height	1.02mm
Minimum Operating Temperature	-55 °C

P-Channel MOSFET, 2.2 A, 20 V, 3-Pin SOT-23 Vishay SI2367DS-T1-GE3

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

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