Vishay Si2367DS Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 3-Pin SOT-23 SI2367DS-T1-GE3

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Subtotal (1 tape of 50 units)*

SGD21.30

(exc. GST)

SGD23.20

(inc. GST)

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Units
Per unit
Per Tape*
50 - 100SGD0.426SGD21.30
150 - 200SGD0.41SGD20.50
250 +SGD0.384SGD19.20

*price indicative

Packaging Options:
RS Stock No.:
812-3136
Mfr. Part No.:
SI2367DS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

3.8A

Maximum Drain Source Voltage Vds

20V

Series

Si2367DS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.066Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.7W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

9nC

Maximum Gate Source Voltage Vgs

8 V

Maximum Operating Temperature

150°C

Length

3.04mm

Height

1.02mm

Width

1.4 mm

Standards/Approvals

RoHS 2002/95/EC, IEC 61249-2-21

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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