Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5935CDC-T1-GE3

RS Stock No.:: 818-1352
Mfr. Part No.:: SI5935CDC-T1-GE3
Manufacturer:: Vishay

Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5935CDC-T1-GE3

Bulk discount available

Price Each (In a Pack of 20)

SGD0.617

(exc. GST)

SGD0.673

(inc. GST)

2680 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
20 - 20	SGD0.617	SGD12.34
40 - 180	SGD0.595	SGD11.90
200 - 380	SGD0.572	SGD11.44
400 - 780	SGD0.551	SGD11.02
800 +	SGD0.541	SGD10.82

**price indicative

RS Stock No.:: 818-1352
Mfr. Part No.:: SI5935CDC-T1-GE3
Manufacturer:: Vishay

Si5935CDC, Dual P-Channel 20V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	3.8 A
Maximum Drain Source Voltage	20 V
Package Type	1206 ChipFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	156 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	3.1 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Number of Elements per Chip	2
Transistor Material	Si
Width	1.7mm
Maximum Operating Temperature	+150 °C
Length	3.1mm
Typical Gate Charge @ Vgs	7 nC @ 5 V
Height	1.1mm
Minimum Operating Temperature	-55 °C

Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5935CDC-T1-GE3

Dual P-Channel MOSFET, Vishay Semiconductor

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