Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5935CDC-T1-GE3

RS Stock No.:: 919-4325
Mfr. Part No.:: SI5935CDC-T1-GE3
Manufacturer:: Vishay

Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5935CDC-T1-GE3

Price Each (On a Reel of 3000)

SGD0.338

(exc. GST)

SGD0.368

(inc. GST)

2680 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Reel**
3000 +	SGD0.338	SGD1,014.00

**price indicative

RS Stock No.:: 919-4325
Mfr. Part No.:: SI5935CDC-T1-GE3
Manufacturer:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	3.8 A
Maximum Drain Source Voltage	20 V
Package Type	1206 ChipFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	156 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	3.1 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Width	1.7mm
Typical Gate Charge @ Vgs	7 nC @ 5 V
Length	3.1mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Number of Elements per Chip	2
Minimum Operating Temperature	-55 °C
Height	1.1mm

Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5935CDC-T1-GE3

Dual P-Channel MOSFET, Vishay Semiconductor

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