Vishay Isolated TrenchFET 2 Type P, Type N-Channel Power MOSFET, 4.5 A, 12 V Enhancement, 6-Pin SC-70

This image is representative of the product range

Subtotal (1 reel of 3000 units)*

SGD1,458.00

(exc. GST)

SGD1,590.00

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 13 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +SGD0.486SGD1,458.00

*price indicative

RS Stock No.:
165-7183
Mfr. Part No.:
SIA517DJ-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

12V

Package Type

SC-70

Series

TrenchFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

170mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Maximum Power Dissipation Pd

6.5W

Maximum Gate Source Voltage Vgs

8 V

Typical Gate Charge Qg @ Vgs

9.7nC

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Height

0.8mm

Length

2.15mm

Width

2.15 mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

Dual N/P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links